Impact of oxygen concentration at the HfOx/Ti interface on the behavior of HfOx filamentary memristors
Jinho Hah, Matthew P. West, Fabia F. Athena, Riley Hanus, Eric M. Vogel, Samuel Graham
Topics & Concepts
MemristorMaterials scienceX-ray photoelectron spectroscopyResistive random-access memoryOxygenNeuromorphic engineeringIonNanotechnologyOptoelectronicsChemical engineeringElectronic engineeringElectrical engineeringComputer scienceChemistryVoltageMachine learningArtificial neural networkOrganic chemistryEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering