Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications
J. S. Raj Kumar, D. Nirmal, Manish Kumar Hooda, Surinder Singh, J. Ajayan, L. Arivazhagan
Topics & Concepts
High-electron-mobility transistorMaterials scienceWaferOptoelectronicsSubstrate (aquarium)Breakdown voltageTransistorRF power amplifierRadio frequencySiliconVoltageElectrical engineeringAmplifierEngineeringGeologyCMOSOceanographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials