Pressureless Sintered-Silver Die-Attach at 180 °C for Power Electronics Packaging
Meiyu Wang, Yunhui Mei, Jingyou Jin, Shi Chen, Xin Li, Guo‐Quan Lu
Abstract
Die attachment by pressureless silver sintering at <; 200 °C is significant for power electronic packaging because it can relieve residual thermo-mechanical stress and avoid chip damage. In this letter, we developed a trimodal-silver paste capable of pressureless sintering at as low as 180 °C due to the usage of trimodal-system and 170 °C removable organics agents. The bondline could be densified by neck-formation as expected. Thanks to the high packing density of the trimodal system, a high bonding strength of 35 MPa was achieved. Moreover, IGBT modules were demonstrated using the 180 °C sinterable sintered-Ag die attachment. The output I-V characteristics and the thermal resistance of the IGBT modules were discussed.