Augmented photoelectrochemical water reduction: influence of copper vacancies and hole-transport layer on CuBi<sub>2</sub>O<sub>4</sub> photocathode
Madhusudana Gopannagari, D. Amaranatha Reddy, Da Hong, K. Arun Joshi Reddy, D. Praveen Kumar, Hyun S. Ahn, Tae Kyu Kim
Abstract
Introducing Fe-doped NiO X as hole-transport layer beneath the copper vacancies induced CuBi 2 O 4 photocathode facilitates efficient charge separation and transfer leading to remarkably enhanced photoelectrochemical performance.
Topics & Concepts
PhotocathodeCopperNon-blocking I/OLayer (electronics)Materials scienceDopingPhotoelectrochemistryDepletion regionCharge (physics)OptoelectronicsElectrodeElectrochemistryInorganic chemistryChemistryMetallurgyNanotechnologyPhysicsPhysical chemistryCatalysisElectronBiochemistryQuantum mechanicsCopper-based nanomaterials and applicationsAdvanced Photocatalysis TechniquesElectronic and Structural Properties of Oxides