Two Bulk-Heterojunctions Made of Blended Hybrid Nanocomposites for High-Performance Broadband, Self-Driven Photodetectors
Muhammad Sulaman, Shengyi Yang, Ali Imran, Zhenheng Zhang, Arfan Bukhtiar, Zhen‐Hua Ge, Yong Song, Feiyang Sun, Yurong Jiang, Libin Tang, Bingsuo Zou
Abstract
Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality semiconducting nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, p-n bulk-heterojunctions (BHJs) based photodetectors have shown high detectivity because of the suppressed dark current and high photocurrent, which are due to the larger built-in electric potential within the depletion region and can significantly improve the quantum efficiency by reducing the carriers’ recombination. In this work, PbSe quantum dots (QDs) blended with ZnO nanocrystals (NCs) were used as the n-type layer, while CsPbBr 3 NCs doped with P3HT were used as the p-type layer; as a result, a p-n BHJ was formed with a strong built-in electric field. Consequently, such a kind of p-n BHJ photodetector ITO/ZnO/PbSe:ZnO/CsPbBr 3:P3HT/P3HT/Au showed a high ON/OFF current ratio of 10 5 with a photoresponsivity of 1.4 A/W and specific detectivity of 6.59 × 10 14 Jones under 0.1 mW/cm 2 532 nm illumination in self-driven mode. Moreover, the simulation performed by TCAD also agrees well with our experimental results, and the underlying physical mechanism for enhanced performance is discussed in detail for this type of p-n BHJ photodetector.