Neuromorphic devices realised using self-forming hierarchical Al and Ag nanostructures: towards energy-efficient and wide ranging synaptic plasticity
Rohit Attri, Indrajit Mondal, Bhupesh Yadav, Giridhar U. Kulkarni, C. N. R. Rao
Abstract
) profile under electrical stimulation and its permanence beyond are realized over a wide current compliance range of 0.25 to 300 μA, broadly classifying the short- and long-term potentiation grounded on the characteristics of filamentary structures. The scale-free correlation of potentiation in the device hosting metallic filaments of diverse shapes and strengths could provide an ideal platform for understanding and replicating the complex behavior of the brain for neuromorphic computing.
Topics & Concepts
Neuromorphic engineeringRangingMaterials scienceNanostructurePlasticityNanotechnologySynaptic plasticityEnergy (signal processing)OptoelectronicsComputer scienceArtificial neural networkChemistryComposite materialArtificial intelligenceTelecommunicationsPhysicsQuantum mechanicsBiochemistryReceptorAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering