Turbostratic stacked graphene-based high-responsivity mid-wavelength infrared detector using an enhanced photogating effect
Masaaki Shimatani, Takashi Ikuta, Yuri Sakamoto, Shoichiro Fukushima, Shinpei Ogawa, Kenzo Maehashi
Abstract
We employ turbostratic stacked chemical vapor deposition (CVD) graphene for a mid-wavelength infrared (MWIR) photodetector using the photogating effect. Turbostratic stacked CVD graphene was fabricated by multiple transfer processes. Graphene field effect transistor-based MWIR photodetectors were developed using an InSb substrate. The effect of the three layers of turbostratic stacked graphene enhanced both the field-effect mobility and MWIR response by approximately three times, compared to that of a conventional single-layer graphene photodetector in vacuum at 77 K. Our results may contribute to the realization of low-cost, mass-producible, high-responsivity graphene-based infrared sensors.