Effect of grain boundary scattering on carrier mobility and thermoelectric properties of tellurium incorporated copper iodide thin films
Martin Markwitz, Peter P. Murmu, Song Yi Back, Takao Mori, B. J. Ruck, J. Kennedy
Topics & Concepts
Materials scienceTelluriumThermoelectric effectElectron mobilityScatteringPhonon scatteringSemiconductorGrain boundaryOptoelectronicsSeebeck coefficientSputteringThin filmCarrier scatteringCopperAnalytical Chemistry (journal)Thermal conductivityNanotechnologyOpticsMetallurgyComposite materialChemistryPhysicsThermodynamicsMicrostructureChromatographyAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsZnO doping and properties