High-NA EUV lithography optics becomes reality
L. Wischmeier, Paul Gräupner, Peter Kürz, Winfried Kaiser, Jan van Schoot, Jörg Mallmann, Joost de Pee, Judon Stoeldraijer
Abstract
For each lithography scanner the optics is a key component. While the NXE:3400 with ZEISS Starlith®3400 optics at Numerical Aperture of 0.33 is entering high-volume manufacturing in customer factories, we are developing high NA optics with a Numerical Aperture of 0.55. This optics consists of a highly flexible illumination system and a projection optics enabling single-exposure sub 8nm half-pitch resolution. In this paper, we give an overview of the progress of ZEISS High-NA EUV program where production of first mirrors and frames has already been started.
Topics & Concepts
Extreme ultraviolet lithographyOpticsNumerical apertureLithographyAperture (computer memory)X-ray opticsScannerPhysical opticsPhysicsComputer scienceX-rayAcousticsWavelengthAdvancements in Photolithography TechniquesElectron and X-Ray Spectroscopy TechniquesIntegrated Circuits and Semiconductor Failure Analysis