Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment
T. Suzuki, Yuichi Yamazaki, Takashi Taniguchi, Kenji Watanabe, Yusuke Nishiya, Yu‐ichiro Matsushita, K. Harii, Y. MASUYAMA, Yasuto Hijikata, Takeshi Ohshima
Abstract
Abstract Negatively charged boron vacancy ( V B – ) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V B – with superior spin properties would be desirable. In this study, we demonstrated V B – formation by two thermal treatment methods. Both methods improve the signal-to-noise ratio of optically detected magnetic resonance signal by a factor of 4. Furthermore, a zero-field splitting parameter E which reflects crystal distortion after irradiation significantly reduces for irradiation above 650 °C. These findings indicate that thermal treatment is an effective method for a V B – based quantum sensor.