Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations
Keval Gadani, K.N. Rathod, Davit Dhruv, V.G. Shrimali, Bhargav Rajyaguru, Joyce Joseph, A.D. Joshi, D.D. Pandya, K. Asokan, P.S. Solanki, N.A. Shah
Topics & Concepts
Materials scienceIrradiationDopingIonFluenceResistive random-access memoryAnalytical Chemistry (journal)OptoelectronicsNanotechnologyElectrodePhysical chemistryChemistryPhysicsChromatographyQuantum mechanicsNuclear physicsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsElectronic and Structural Properties of Oxides