Nonlinear optics in ultra-silicon-rich nitride devices: recent developments and future outlook
Dawn T. H. Tan, Doris K. T. Ng, Ju Won Choi, Ezgi Şahin, Byoung‐Uk Sohn, G. F. R. Chen, Peng Xing, Hongwei Gao, Yanmei Cao
Abstract
Nonlinear integrated optics leveraging platforms with high nonlinear figure of merit offer energy efficient optical signal processing capabilities. Over the last five years, CMOS-compatible ultra-silico-rich nitride (USRN) has emerged as a promising platform on which to implement various nonlinear optics functions. Bandgap engineered to maximize the Kerr nonlinearity while maintaining two-photon absorption free behavior at telecommunications wavelengths, USRN possesses a nonlinear refractive index that is 100× larger than that in stoichiometric silicon nitride. In this article, we review the recent progress made in USRN-based nonlinear integrated optics devices. The impacts it has made spanning from high gain optical parametric amplification and observations of soliton effects in photonic waveguides and photonic crystal waveguide structures will be discussed. Finally, we assess the future outlook of CMOS-compatible USRN-based nonlinear optics.