Intrinsic MRAM Properties Enable Security Circuits

Haoran Du, You Wang, Jun Yang, Hao Cai

2023IEEE Transactions on Circuits & Systems II Express Briefs13 citationsDOI

Abstract

The intrinsic behaviors of spin-transfer-torque magnetoresistive random access memory (STT-MRAM) are exploited to implement a true random number generator (TRNG) and physical unclonable function (PUF). High-entropy TRNGs have attracted great interest in stochastic computing and reliable PUFs can prevent access to neural network model weights for in-memory computing. In this survey, We resort to MRAM security circuits implementation with a twofold aim: 1) Refine MRAM-based TRNG and PUF design methods. 2) Introduce a linear correction code to equalize throughput and randomness in TRNG.

Topics & Concepts

Magnetoresistive random-access memoryPhysical unclonable functionRandom number generationComputer scienceRandomnessHardware security moduleSpin-transfer torqueEntropy (arrow of time)CryptographyComputer engineeringRandom access memoryComputer hardwareComputer securityMathematicsPhysicsQuantum mechanicsMagnetic fieldStatisticsMagnetizationPhysical Unclonable Functions (PUFs) and Hardware SecurityAdvanced Memory and Neural ComputingIntegrated Circuits and Semiconductor Failure Analysis