Litcius/Paper detail

Numerical modeling of FS-trench IGBTs by TCAD and its parameter extraction method

Xiao Ma, Yongle Huang, Xin Tang, Yifei Luo, Haonan Shen, Fei Xiao

2023Microelectronics Reliability10 citationsDOI

Topics & Concepts

Insulated-gate bipolar transistorElectronic engineeringKey (lock)Process (computing)Artificial neural networkComputer scienceEngineeringElectrical engineeringArtificial intelligenceVoltageOperating systemComputer securitySilicon Carbide Semiconductor TechnologiesElectrostatic Discharge in ElectronicsInduction Heating and Inverter Technology
Numerical modeling of FS-trench IGBTs by TCAD and its parameter extraction method | Litcius