Scale-free ferroelectricity induced by flat phonon bands in HfO <sub>2</sub>
Hyun‐Jae Lee, Minseong Lee, Kyoungjun Lee, Jinhyeong Jo, Hyemi Yang, Yungyeom Kim, Seung Chul Chae, Umesh V. Waghmare, Jun Hee Lee
Abstract
cause extreme localization of electric dipoles within its irreducible half-unit cell widths (~3 angstroms). Contrary to conventional ferroelectrics with spread dipoles, those intrinsically localized dipoles are stable against extrinsic effects such as domain walls, surface exposure, and even miniaturization down to the angstrom scale. Moreover, the subnanometer-scale dipoles are individually switchable without creating any domain-wall energy cost. This offers unexpected opportunities for ultimately dense unit cell-by-unit cell ferroelectric switching devices that are directly integrable into silicon technology.
Topics & Concepts
PhononFerroelectricityCondensed matter physicsScale (ratio)Materials sciencePhysicsOptoelectronicsQuantum mechanicsDielectricFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials