Review of Sublimation Growth of SiC Bulk Crystals
Peter J. Wellmann, Matthias Arzig, Jonas Ihle, Manuel Kollmuß, Johannes Steiner, Marco Mauceri, Danilo Crippa, Francesco La Via, Michael Salamon, Norman Uhlmann, Melissa Roder, A.N. Danilewsky, Binh Duong Nguyen, Stefan Sandfeld
Abstract
The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).
Topics & Concepts
Sublimation (psychology)Materials scienceDislocationCrystallographyEngineering physicsNanotechnologyCondensed matter physicsComposite materialPsychologyEngineeringPsychotherapistPhysicsChemistrySilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesAdvanced ceramic materials synthesis