Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology
Jun Deng, Jiadong Yu, Zhibiao Hao, Jianbin Kang, Boyang Lu, Lai Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Yi Luo
Abstract
We demonstrate an optically pumped single-photon emitter operating at room temperature based on disk-shaped GaN/AlN quantum dots embedded in the nanowire (dot-in-wire) structure, which can act as an optical source for future quantum information technologies. The disk-like geometry of the quantum dot (QD) leads to well-defined strain distribution and controllable optical properties of the QD structure, which is revealed by theoretical calculations using a continuous elasticity model. Site-controlled GaN/AlN dot-in-wires are grown by selective area growth on prepatterned Ti/N-polar AlN/Si substrates using molecular beam epitaxy. The internal quantum efficiency of GaN QDs is 31.1%, and their photoluminescence (PL) wavelengths are in good agreement with the calculation. Measured by a micro-PL spectroscopy integrated with a Hanbury-Brown and Twiss setup, the second-order correlation at zero time delay (g(2)(0)) reaches 0.19 at room temperature for the site-controlled GaN/AlN dot-in-wires. Our work provides a promising approach to realize high-performance single-photon emission devices on-demand for application in quantum information technology.