Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi<sub>2</sub>N<sub>4</sub> (M = Mo, W)/2D Metal Contacts
Wen Ai, Yongfei Shi, Xiaohui Hu, Jian Yang, Litao Sun
Abstract
Monolayer MSi 2 N 4 (M = Mo, W) has been fabricated and proposed as a promising channel material for field-effect transistors (FETs) due to the high electron/hole mobility. However, the barrier between the metal electrode and MSi 2 N 4 will affect device performance. Hence, it is desirable to reduce the barrier for achieving high-performance electrical devices. Here, using density functional theory (DFT) calculations, we systematically investigate the electrical properties of the van der Waals (vdW) contacts formed between MSi 2 N 4 and two-dimensional (2D) metals (XY 2, X = Nb, Ta, Y = S, Se, Te). It is found that the contact types and Schottky barrier height (SBH) of MSi 2 N 4 /XY 2 can be effectively tuned by selecting 2D metals with different work functions (WFs). Specifically, n- and p-type Schottky contacts and Ohmic contacts can be achieved in MSi 2 N 4 /XY 2 . Among them, MoSi 2 N 4 /H-NbS 2, WSi 2 N 4 /H-XS 2, and WSi 2 N 4 /H-NbSe 2 present Ohmic contacts due to the high WF of 2D metals. Notably, the pinning factors of MSi 2 N 4 /XY 2 are obviously larger than those of the other 2D semiconductor/metal contacts, indicating that the Fermi-level pinning (FLP) effect is weak in MSi 2 N 4 /XY 2 . Therefore, vdW stack engineering can strongly weaken the FLP effect, making the Schottky barrier tunable in MSi 2 N 4 /XY 2 by choosing 2D metals with different WFs. The results provide important insights into the selection of appropriate electrodes and valuable guidance for the development of MSi 2 N 4 -based 2D electronic devices with high performance.