Ion–Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications
Tingting Mei, Fandi Chen, Tianxu Huang, Zijian Feng, Tao Wan, Zhaojun Han, Zhi Li, Long Hu, Chun‐Ho Lin, Yuerui Lu, Wenlong Cheng, Dongchen Qi, Dewei Chu
Abstract
With the increasing limitations of conventional computing techniques, particularly the von Neumann bottleneck, the brain's seamless integration of memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation by modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one of the most promising candidates for neuromorphic computing. Meanwhile, the atomic-scale thickness and tunable electronic properties of van der Waals two-dimensional (2D) materials enable the possibility of designing highly integrated, energy-efficient devices that closely replicate synaptic plasticity. This review comprehensively analyzes advancements in iontronic synaptic devices based on 2D materials, focusing on electron-ion interactions in both iontronic transistors and memristors. The challenges of material stability, scalability, and device integration are evaluated, along with potential solutions and future research directions. By highlighting these developments, this review offers insights into the potential of 2D materials in advancing neuromorphic systems.