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Characterization of a nanopipe dislocation in GaN by means of HR-EBSD and field dislocation mechanics analysis

Clément Ernould, Vincent Taupin, Benoît Beausir, J.J. Fundenberger, Nabila Maloufi, Julien Guyon, Emmanuel Bouzy

2022Materials Characterization11 citationsDOIOpen Access PDF

Topics & Concepts

DislocationBurgers vectorMaterials scienceElectron backscatter diffractionCharacterization (materials science)Peierls stressCondensed matter physicsDiffractionStress fieldRotation (mathematics)Shear stressOpticsDislocation creepPhysicsGeometryComposite materialNanotechnologyMathematicsThermodynamicsFinite element methodMetal and Thin Film MechanicsNanowire Synthesis and ApplicationsGaN-based semiconductor devices and materials
Characterization of a nanopipe dislocation in GaN by means of HR-EBSD and field dislocation mechanics analysis | Litcius