Advanced thermoelastic modeling of photothermal-induced heat generation in nonsimple circular semiconductor plates

Abstract

This study introduces a novel hyperbolic thermoelastic model tailored for elastic semiconducting materials, marking a significant leap in the analysis of thermal and mechanical behavior under photothermal excitation. The model’s novelty arises from its incorporation of nonsimple characteristics, where heat sources are defined as a linear function of temperature within the semiconductor medium. By employing the dual-phase lag (DPL) theory, the model emphasizes the temperature-disparity parameter, delivering a more precise depiction of transient heat conduction behavior at the microscale. This approach addresses gaps in existing models and sheds light on intricate heat transfer dynamics. A key contribution is the application of integral transformation techniques to solve equations based on the two-temperature theory. Analytical solutions are derived for displacement, carrier density, thermal stress, and temperature fields in a thin, two-dimensional, circular semiconductor plate subjected to ramp-type sectional heating. These physical fields, influenced by mechanical forces and thermal loads on the plate’s free surface, underscore the coupled interaction between photothermal and mechanical effects. The study also introduces a methodological innovation by utilizing numerical approximation techniques for the inverse Laplace transform, enabling seamless analysis in the time space domain. The results, presented graphically, reveal the intricate coupling of physical phenomena and provide profound insights into thermo-photoelastic systems. This work has substantial implications for optoelectronics, material science, and nanoscale systems. It not only advances our understanding of semiconducting materials but also lays the groundwork for innovations in thermal management, device optimization, and multiphysics simulations, bridging theoretical models with real-world applications.

Topics & Concepts