An Enhanced Ultra-High Gain Active-Switched Quasi Z-Source Inverter
Pritam Kumar Gayen, Sudhansu Sekhar Das
Abstract
This brief proposes an enhanced ultra-high gain quasi Z-source inverter (EUHG-qZSI) having single unit of active switched capacitive network and switched inductor respectively. This inverter provides very high voltage gain profile with limiting value of shoot-through duty ratio of 0.186 and also, numerator factor of its gain is two times of (1+shoot-through duty ratio). Thus, the suggested inverter achieves higher voltage gain than the existing ultra-high/high gain/two-switched topologies. The voltage stresses on switches and capacitors of the proposed inverter are reduced. It also retains desirable qualities such as common ground with input DC supply and continuous source-side current for providing relief from current stress on input supply. The steady-state voltage gain, parameter values, current and voltage stresses of its components, loss and input current ripple are given to analyze the operation and characteristics of proposed inverter. The comparative voltage gains, voltage stresses and average switching device power are given to indicate its decent performances. Observations of both simulation and experimental verifications indicate real-time working of the suggested inverter.