Forming and compliance-free operation of low-energy, fast-switching HfO<sub><i>x</i></sub>S<sub><i>y</i></sub>/HfS<sub>2</sub> memristors
Aferdita Xhameni, AbdulAziz AlMutairi, Xuyun Guo, Irina Chircă, Tianyi Wen, Stephan Hofmann, Valeria Nicolosi, Antonio Lombardo
Abstract
Memristors based on partially oxidised layered semiconductors show sub-nJ resistance switching between several states with no need for electroforming or compliance, making them promising candidates for future neuromorphic computing hardware.
Topics & Concepts
MemristorMaterials scienceEnergy (signal processing)OptoelectronicsElectrical engineeringPhysicsEngineeringQuantum mechanicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices