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The structural, mechanical and electrical properties of 2D SiC with C-related point defects and substitution of C by foreign atoms

Lingqin Huang, Haoyu Liu, Xuliang Deng, Wenwen Cui

2022Vacuum15 citationsDOI

Topics & Concepts

Materials scienceBand gapSemiconductorVacancy defectImpurityCondensed matter physicsCharge carrierDirect and indirect band gapsCrystallographic defectWide-bandgap semiconductorPhononCrystallographyOptoelectronicsChemistryOrganic chemistryPhysicsGraphene research and applicationsMXene and MAX Phase Materials2D Materials and Applications
The structural, mechanical and electrical properties of 2D SiC with C-related point defects and substitution of C by foreign atoms | Litcius