Organic Memory and Memristors: From Mechanisms, Materials to Devices
Lei Yuan, Shuzhi Liu, Weilin Chen, Fei Fan, Gang Liu
Abstract
Abstract Facing the exponential growth of data digital communications and the advent of artificial intelligence, there is an urgent need for information technologies with huge storage capacity and efficient computing processing. However, the traditional von Neumann architecture and silicon‐based storage and computing technology will reach their limits and cannot meet the storage requirements of ultrasmall size, ultrahigh density, and memory computing. Considering these issues, organic material resistance switching memory and memristor devices have become promising candidates for high‐density storage, logic computing, and neuromorphic computing because of their advantages of fast speed, high energy efficiency, nonvolatile storage, and low cost. In this article, the working mechanism, material design strategy, and device performance of organic memory and memristors are reviewed.