Annealing temperature induced improved crystallinity of YSZ thin film
N.A. Rusli, Rosnita Muhammad, Sib Krishna Ghoshal, Hadi Nur, Nafarizal Nayan
Abstract
Abstract Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400 °C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films’ surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500 °C divulged less oriented structure because of dislocation.