Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
Isabel Streicher, Stefano Leone, C. Manz, Lutz Kirste, Mario Prescher, Patrick Waltereit, M. Mikulla, R. Quay, O. Ambacher
Abstract
AlScN/GaN heterostructures with their high sheet carrier density ( n s ) in the two-dimensional electron gas (2DEG) have a high potential for high-frequency and high-power electronics. The abruptness of the heterointerface plays a key role in the 2DEG confinement, and the presence of interlayers (AlN, AlGaN) affects n s and electron mobility (μ) and determines the sheet resistance ( R sh ). AlScN/GaN heterostructures suitable for high-electron mobility transistors (HEMT) with and without a nominal AlN interlayer were grown by metal–organic chemical vapor deposition (MOCVD) and characterized electrically and structurally to gain a systematic insight into the unintentional formation and control of graded AlGaN interlayers by diffusion of atoms at the heterointerface. The AlN interlayer increases n s from 2.52 × 10 13 cm –2 to 3.25 × 10 13 cm –2 and, as calculated by one-dimensional Schrödinger–Poisson simulations, improves the 2DEG confinement. The barrier growth temperature was varied from 900 °C to 1200 °C to investigate the effect of the thermal budget on diffusion. Growth at 900 °C reduces the thickness of the graded AlGaN interlayer and improves the 2DEG confinement, leading to R sh of 211 Ω/sq, n s of 2.98 × 10 13 cm –2, and μ of 998 cm 2 /(Vs).