The Schottky barrier transistor in emerging electronic devices
Mike Schwarz, Tom Doekle Vethaak, Vincent Derycke, Anaïs Francheteau, Benjamı́n Iñı́guez, Satender Kataria, Alexander Kloes, F. Lefloch, Max C. Lemme, John P. Snyder, W. Weber, Laurie E. Calvet
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.