Lateral Growth of MoS<sub>2</sub> 2D Material Semiconductors Over an Insulator Via Electrodeposition
Nema M. Abdelazim, Yasir J. Noori, Shibin Thomas, Victoria K. Greenacre, Yisong Han, Danielle E. Smith, Giacomo Piana, Nikolay Zhelev, Andrew L. Hector, Richard Beanland, Gillian Reid, Philip N. Bartlett, C.H. de Groot
Abstract
Abstract Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS 2 ) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS 2 2D films grown from TiN electrodes across opposite sides are connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS 2 is shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20‐fold. Electronic and photo‐response measurements on the device structures demonstrate that the electrodeposited MoS 2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way toward room temperature, scalable, and site‐selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials‐based fabricated devices.