Geometrical Variability Impact on the Performance of Sub - 3 nm Gate-All-Around Stacked Nanosheet FET
Nisha Yadav, Sunil Jadav, Gaurav Saini
Topics & Concepts
NanosheetMaterials scienceTransconductanceOptoelectronicsCapacitanceOxideGate oxideTransistorField-effect transistorNanotechnologyElectrical engineeringVoltageEngineeringPhysicsElectrodeMetallurgyQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications