Mo <i> <sub>x</sub> </i> Si <sub>1−</sub> <i> <sub>x</sub> </i> a versatile material for nanowire to microwire single-photon detectors from UV to near IR
Adriana E. Lita, Varun B. Verma, Jeff Chiles, Richard P. Mirin, Sae Woo Nam
Abstract
Abstract We investigate material properties in Mo x Si 1− x thin films with the goal of optimization for single-photon detection from UV to mid-IR wavelengths. Saturated internal detection efficiency appears to be related to film structure for this material. We demonstrate nanometer-wide meander devices with saturated internal efficiency at 370 nm wavelength and 3.4 K operation temperature. By reducing the film thickness in the optimized material, we demonstrate saturated internal detection efficiency at 1550 nm wavelength and 1 K operation temperature for micron-wide meander shaped single-photon detectors with wire widths up to 2.0 μ m and active areas up to 362 × 362 μ m 2 .