Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
Zuopu Zhou, Leming Jiao, Jiuren Zhou, Qiwen Kong, Sheng Luo, Chen Sun, Zijie Zheng, Xiaolin Wang, Dong Zhang, Gan Liu, Gengchiau Liang, Xiao Gong
Abstract
Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing.