Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of Sheets
F. M. Bufler, Doyoung Jang, Geert Hellings, Geert Eneman, Philippe Matagne, A. Spessot, M. H. Na
Abstract
Analytic doping profiles and contact resistivities are adjusted to reproduce measured transfer characteristics of state-of-the-art n-type and p-type FinFETs by Monte Carlo device simulation. The results are used to compare the performance of nanosheets (NSs) and FinFETs at advanced-node device dimensions. It is found that the ON-current normalized by the effective gate width reduces for a higher number of sheets due to a higher access resistance of the lower-lying sheets. In order to reach the same absolute current level of FinFETs with a fin height of 55 nm, more than two sheets for n-type and about four sheets for the p-type NSs with a NS width of 16 nm are needed, respectively. This technology computer-aided design (TCAD) approach can serve as input for design-technology cooptimization (DTCO) of advanced devices.