Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination
Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sebastian Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, J. Heitmann
Abstract
HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the underlying defect interaction in FeFETs.
Topics & Concepts
ScalabilityFerroelectricityMaterials scienceCharacterization (materials science)Interface (matter)Noise (video)OptoelectronicsStability (learning theory)Electronic engineeringComputer scienceEngineeringNanotechnologyArtificial intelligenceComposite materialOperating systemMachine learningCapillary actionDielectricCapillary numberImage (mathematics)Ferroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design