Bandgap Tuning and Input Parameter Optimization for Lead‐Free All‐Inorganic Single, Double, and Ternary Perovskite‐Based Solar Cells
K. Deepthi Jayan
Abstract
A comprehensive device performance optimization of perovskite solar cells (PSCs) having the device configurations FTO/IGZO/CsSn 0.5 Ge 0.5 I 3 /CuO/Au, FTO/IGZO/Cs 4 CuSb 2 Cl 12 /CuO/Au, and FTO/IGZO/Cs 3 Bi 2 I 9 /CuO/Au containing the single, double, and ternary perovskites CsSn 0.5 Ge 0.5 I 3 , Cs 4 CuSb 2 Cl 12 , and Cs 3 Bi 2 I 9 , respectively, is done utilizing the SCAPS 1D tool. The bandgap tuning of the perovskite layers and the work function optimization of the rear‐contact metals for the chosen device designs provide an enhanced power conversion efficiency of 23.15%, 17.39%, and 9.75% for the solar cell architecture with the light‐captivating layers CsSn 0.5 Ge 0.5 I 3 , Cs 4 CuSb 2 Cl 12 , and Cs 3 Bi 2 I 9 , respectively. Herein, it is identified the variation of electron affinity of the perovskite layer for the aforementioned device configurations does not produce any significant enhancement in the output parameters of the simulated configurations.