The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications
A. Danielraj, Sanjoy Deb, A. Mohanbabu, R. Saravana Kumar
Topics & Concepts
Materials scienceTransconductanceOptoelectronicsHigh-electron-mobility transistorBreakdown voltageSaturation currentTransistorVoltageElectrical engineeringEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices