Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier density
Shyamal Mukhopadhyay, Bratati Mukhopadhyay, Gopa Sen, P. K. Basu
Topics & Concepts
DopingElectron mobilityScatteringCondensed matter physicsMaterials scienceCharge-carrier densitySemiconductorElectron densityElectronImpurityEffective mass (spring–mass system)Ionized impurity scatteringAlloyWork (physics)PhysicsOptoelectronicsOpticsThermodynamicsComposite materialQuantum mechanicsPhotonic and Optical DevicesSilicon Nanostructures and PhotoluminescenceThin-Film Transistor Technologies