Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers
A. Parisini, A. Bosio, H. J. von Bardeleben, J. Jiménez, Shabnam Dadgostar, M. Pavesi, A. Baraldi, Salvatore Vantaggio, R. Fornari
Topics & Concepts
Materials scienceAcceptorCathodoluminescenceShallow donorDopingPhotocurrentSiliconFermi levelElectrical resistivity and conductivityCrystallographic defectElectron mobilityCondensed matter physicsSpreading resistance profilingAnalytical Chemistry (journal)ElectronOptoelectronicsChemistryPhysicsElectrical engineeringQuantum mechanicsLuminescenceEngineeringChromatographyGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques