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Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

G. X. Hu, Guanglei Zhong, Xixi Xiong, Huadong Li, Hongyu Shao, Laibin Zhao, Xiaomeng Li, Xianglong Yang, Xiufang Chen, Xuejian Xie, Yan Peng, Guojian Yu, Xiaobo Hu, Xiangang Xu, Xiangang Xu

2024Vacuum37 citationsDOI

Topics & Concepts

WaferElectrical resistivity and conductivityMaterials scienceFacet (psychology)Crystal (programming language)DopingClassification of discontinuitiesComposite materialThermalOptoelectronicsElectrical engineeringThermodynamicsPersonalitySocial psychologyPhysicsComputer scienceMathematicsMathematical analysisEngineeringBig Five personality traitsProgramming languagePsychologySilicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionCopper Interconnects and Reliability
Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field | Litcius