Unraveling the Atomic Structure of Bulk Binary Ga–Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications
Maria Bokova, Andrey Tverjanovich, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Mohammad Kassem, И.А. Ожередов, Е. Бычков
Abstract
≤ 0.25, following their thermal, electric, and optical properties, revealing a semiconductor-metal transition above melting. We also show that a phase change in binary Ga-Te is characterized by a very unusual nanotectonic compression with the high internal transition pressure reaching 4-8 GPa, which appears to be beneficial for PCM applications increasing optical and electrical contrast between the SET and RESET states and decreasing power consumption.
Topics & Concepts
Materials scienceTernary operationRaman spectroscopyAmorphous solidPhase-change memoryPhase transitionDiffractionGalliumCrystallizationPhase (matter)Condensed matter physicsOptoelectronicsChemical physicsThermodynamicsNanotechnologyCrystallographyOpticsMetallurgyPhysicsProgramming languageLayer (electronics)Organic chemistryChemistryComputer sciencePhase-change materials and chalcogenidesGlass properties and applicationsNonlinear Optical Materials Studies