On the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM
Simon Thomann, Chao Li, Cheng Zhuo, Om Prakash, Xunzhao Yin, Xiaobo Sharon Hu, Hussam Amrouch
Abstract
With the rapid development of emerging technologies, especially the ferroelectric field-effect transistors (FeFETs), the density and energy efficiency of ternary content addressable memory (TCAM) have been increasingly improved. TCAM plays a major role in realizing In-Memory Computing and other brain-inspired computing concepts. Recently, the parallel search functionality of a FeFET based ultra-dense TCAM design is also enhanced with a Hamming distance-based approximate search scheme. However, in order to realize the highly-promising TCAM design, in which the approximate search function based on Hamming distance is implemented, it is inevitable to investigate the impact of temperature on the reliability of FeFET-based TCAM cells as well as all involved peripheral circuits. In this paper, the temperature impact on the FeFET at the device level and the approximate TCAM design at the circuit level is investigated for the first time. The demonstrated example of a FeFET-based TCAM array shows that the unique temperature dependency of a FeFET device can help mitigate the temperature impact on the FeFET TCAM array. Based on the observation, we showcase, evaluate, and discuss in detail one strategy to eliminate the temperature impact on the approximate TCAM design. Understanding and mitigating the deleterious impact of temperature on the reliability of FeFET-based TCAM circuits is essential to ensure reliable In-Memory Computing.