Anisotropic properties of pipe-GaN distributed Bragg reflectors
Chia-Jung Wu, Yiyun Chen, Chengjie Wang, Guo-Yi Shiu, Chin-Han Huang, Heng‐Jui Liu, Hsiang Chen, Yung‐Sen Lin, Chia‐Feng Lin, Jung Han
Abstract
-GaN : Si layers in a stacked structure through a lateral and doping-selective electrochemical etching process. Central wavelengths of the polarized reflectance spectra were measured to be 473 nm and 457 nm for the pipe-GaN reflector when the direction of the linear polarizer was along and perpendicular to the pipe-GaN structure. The DBR reflector with directional pipe-GaN layers has the potential for a high efficiency polarized light source and vertical cavity surface emitting laser applications.
Topics & Concepts
AnisotropyMaterials scienceOptoelectronicsOpticsPhysicsGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials