3.3 <i>µ</i> m interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth
D. A. Díaz-Thomas, Oleksandr Stepanenko, M. Bahriz, S. Calvez, Thomas Batté, Cyril Paranthoën, G. Patriarche, E. Tournié, А. Н. Баранов, Guilhem Almuneau, Christophe Levallois, L. Cerutti
Abstract
Abstract We demonstrate an interband cascade resonant cavity light emitting diode (IC-RCLED) operating near 3.3 µ m at room temperature. The device is composed of a Sb-based type-II interband-cascade active zone enclosed between two distributed Bragg mirrors (DBR). The bottom high reflective DBR is composed of GaSb/AlAsSb quarter-wave layers. A metamorphic III-As region is grown after the active zone to benefit from the AlOx technology for efficient electro-optical confinement. The structure is finished with a top ZnS/Ge dielectric DBR. The devices with oxide aperture ranging from 5 µ m to 35 µ m were studied in the continuous wave regime. The fabricated IC-RCLEDs operated up to 80 °C (set-up limited) and exhibited narrow emission spectra with a full width half maximum of 21 nm, which is 20 times smaller compared with conventional IC-LEDs. The narrow emission line and its weak temperature dependence make the fabricated devices very attractive for low cost gas sensors.