Rare earth halide double perovskites for high-performance resistive random access memory
Tong Tong, Chang Liu, Jing Xu, Huihua Min, Su Chen, Yinong Lyu, Chongguang Lyu
Abstract
We report the resistive memory devices based on rare earth halide double perovskite Cs 2 AgEuBr 6 films which demonstrate a typical random-access memory (ReRAM) behavior with high ON/OFF ratio and long retention time.
Topics & Concepts
Resistive random-access memoryMaterials sciencePerovskite (structure)HalideResistive touchscreenOptoelectronicsRare earthRandom access memoryRandom accessRetention timeElectrodeChemical engineeringInorganic chemistryComputer scienceComputer hardwareMetallurgyPhysical chemistryOperating systemEngineeringChemistryChromatographyAdvanced Memory and Neural ComputingPerovskite Materials and ApplicationsTransition Metal Oxide Nanomaterials