High performance 940nm VCSELs on large area germanium substrates: the ideal substrate for volume manufacture
Andrew Johnson, Andrew Joel, Andrew Clark, Dan Pearce, M. Geen, Wang Wang, Rodney Pelzel, Sung Wook Lim
Abstract
Wafer bow/warp in high performance 940nm VCSEL epitaxial wafers has been eliminated through the use of 150 mm Ge substrates, replacing conventional GaAs substrates. Ge is a drop-in replacement for GaAs for this application and has additional benefits in that it is zero EPD and mechanically more robust. High performance 940nm VCSELs have been fabricated on Ge and compared directly with those grown on GaAs with the same structure, with no discernible difference in device performance between the two approaches. Use of Ge also provides an immediate route to 200 mm VCSEL growths as Ge is readily available at that diameter.
Topics & Concepts
Materials scienceWaferGermaniumOptoelectronicsVertical-cavity surface-emitting laserEpitaxyGallium arsenideSubstrate (aquarium)Volume (thermodynamics)LaserOpticsSiliconNanotechnologyLayer (electronics)OceanographyGeologyPhysicsQuantum mechanicsSemiconductor materials and devicesSemiconductor Lasers and Optical DevicesPhotonic and Optical Devices