Enhancement in the luminescence of green-emission from emissive surface defects of Dy3+doped ZnO nanoluminophores: A simple, mass-scale productive approach for optoelectronic devices
Rajesh Kumar, Sheo K. Mishra
Abstract
In the present work, dysprosium doped ZnO (DZO). nanoluminophores with different Dy concentrations are prepared by simple, one-step and mass-scale productive solid state reaction method. The structural, morphological and optical properties of synthesized Dy doped ZnO nanoluminophores have been characterized using X-ray diffraction (XRD) patterns, field emission scanning microscopy (FE-SEM), Fourier transfer infrared spectroscopy (FT-IR) and photoluminescence (PL) spectroscopy respectively. The XRD patterns of Dy-doped ZnO samples show hexagonal wurtzite structure having broadening in peaks indicates the formation of nano-sized structures. The estimated particle sizes of prepared samples are found to be in the range of ∼17–85 nm. The SEM micrographs indicate that the synthesized samples are spherical in natures and observed a change in their morphologies with Dy concentrations. FTIR results exhibit several absorption bands of ZnO:Dy nanoluminophores at room temperature. Photoluminescence spectra illustrate enhanced PL emission intensity of peaks at ∼391–397 nm in UV region and defects related green emissions ranging from ∼505–510 nm in visible region. The obtained results reveal the suitability of synthesized rare-earth (RE) doped ZnO nanoluminophores for optoelectronic devices.