Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array
Qi Xue, Peng Yan, Liang Cao, Yuanyuan Xia, Jianghu Liang, Chun‐Chao Chen, Ming Li, Tao Hang
Abstract
cycles), and multilevel storage capability. A finite element analysis, transmission electron microscope observation, and current mapping test indicate that the local enhancement of the electric field confines the ionic migration process and yields a predictable formation and dissolution process of the conductive filament. The nanocone-array-based RRAM device provides a new and feasible method to control the conductive filament growth reliably, which paves the way for memristor development.
Topics & Concepts
Materials scienceResistive random-access memoryMemristorNeuromorphic engineeringOptoelectronicsElectroformingVoltageNanotechnologyNon-volatile memoryElectronic engineeringElectrical engineeringComputer scienceLayer (electronics)Artificial neural networkMachine learningEngineeringAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices