Litcius/Paper detail

Enhanced resistive switching performance in yttrium-doped CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite devices

Feifei Luo, Liuxia Ruan, Junwei Tong, Yanzhao Wu, Caixiang Sun, Gaowu Qin, Fubo Tian, Xianmin Zhang

2021Physical Chemistry Chemical Physics22 citationsDOI

Abstract

In this study, yttrium-doped CH 3 NH 3 PbI 3 and pure CH 3 NH 3 PbI 3 perovskite films have been fabricated using a one-step solution spin coating method in a glove box to construct memristors.

Topics & Concepts

YttriumPerovskite (structure)Materials scienceDopingSpin coatingMemristorResistive touchscreenOptoelectronicsNanotechnologyChemical engineeringInorganic chemistryThin filmChemistryMetallurgyElectronic engineeringElectrical engineeringOxideEngineeringPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingSolid-state spectroscopy and crystallography
Enhanced resistive switching performance in yttrium-doped CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite devices | Litcius