High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga<sub>2</sub>O<sub>3</sub> thin film*
Yusong Zhi, Weiyu Jiang, Zeng Liu, Yuan-Yuan Liu, Xulong Chu, Jia-Hang Liu, Shan Li, Zuyong Yan, Yuehui Wang, Peigang Li, Zhenping Wu, Weihua Tang
Abstract
Si-doped β -Ga 2 O 3 films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 μW⋅cm −2 254 nm illumination and ± 20 V bias, leading to photo-responsivity as high as 788 A⋅W −1 . The Si-doped β -Ga 2 O 3 -based PD is promised to perform solar-blind photodetection with high performance.
Topics & Concepts
ResponsivityPhotocurrentMaterials scienceMetalorganic vapour phase epitaxyPhotodetectionPhotodetectorChemical vapor depositionOptoelectronicsPhotolithographyDopingUltravioletOpticsEpitaxyNanotechnologyPhysicsLayer (electronics)Ga2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques