Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials
Fang Yang, Hong Kuan Ng, Xin Ju, Weifan Cai, Jing Cao, Dongzhi Chi, Ady Suwardi, Guangwei Hu, Zhenhua Ni, Xiao Renshaw Wang, Junpeng Lü, Jing Wu
Abstract
Abstract The rapid development in information technologies necessitates rapid advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck of traditional von Neumann architecture. Bottom‐up innovation, especially at the materials and devices level, has the potential to disrupt existing technologies through their emergent phenomena. As a new type of conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due to its potential integration with modern semiconductor processes. Its low power consumption, area efficiency, and ultra‐fast operation provide an extra edge over traditional technologies. This review highlights recent developments in 2D FeFET, covering their device construction, working mechanisms, 2D ferroelectric polarization mechanism, multi‐functional applications and prospects. In particular, the combination of 2D semiconductor and ferroelectric dielectric materials for multi‐functionality applications is discussed. This includes non‐volatile memories (NVM), neural network computing, non‐volatile logic operation, and photodetectors. As a novel device platform, 2D semiconductor and ferroelectric interfaces are bestowed with a plethora of emergent physical mechanisms and applications.